LOGO
LOGO
NGTB15N60S1EG Image

img for reference only

Mfr. #:
NGTB15N60S1EG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
onsemi IGBT, max. 600 V, max. 30 A
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 30 A
Maximum collector-emitter voltage 600 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 117 W
Package type TO-220
Configuration -
Mounting type Through hole
Channel type N
Number of pins 3
Switching speed -
Transistor configuration Single
Dimensions 10.28 x 4.82 x 15.75mm
Related models
  • LC75878WS-E

    LCD Driver 100-SQFP (14x14)

  • LC75879PTS-H

    LCD Driver 80-TQFPJ (12x12)

  • LC75879PTS-T-H

    LCD Driver 80-TQFPJ (12x12)

  • NSVDTC123JM3T5G

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723

  • KST2222AMTF

    Transistor - Bipolar (BJT) - Single NPN 40 V 600 mA 300MHz 350 mW Surface Mount SOT-23-3

  • KST2907AMTF

    Transistor - Bipolar (BJT) - Single PNP 60 V 600 mA 200MHz 350 mW Surface Mount SOT-23-3

  • BCX19

    Transistor - Bipolar (BJT) - Single NPN 45 V 500 mA 300 mW Surface Mount SOT-23-3

  • FGH40T65UQDF-F155

    IGBT Trench Field Stop 650 V 80 A 231 W Through Hole TO-247-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd