LOGO
LOGO
FDPF5N60NZ Image

img for reference only

Mfr. #:
FDPF5N60NZ
Mfr.:
ON Semiconductor
Batch:
23+
Description:
MOSFET 600V, N-Channel MOSFET, UniFET-II
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 600 V
Id-Continuous Drain Current 4.5 A
Rds On-Drain-Source On-Resistance 1.65 Ohms
Vgs - Gate-Source Voltage - 25 V, 25 V
Vgs th-Gate-Source Threshold Voltage 5 V
Qg-Gate Charge 10 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 33 W
Channel Mode Enhancement
Qualification
Trade Name UniFET
Package Tube
Related models
  • MC7908CD2TG

    IC: voltage regulator; linear,fixed; -8V; 1A; D2PAK; SMD; tube; ±4%

  • MC7908CD2TR4G

    IC: voltage regulator; linear,fixed; -8V; 1A; D2PAK; SMD; reel,tape

  • NSS20500UW3TBG

    Low Saturation Voltage Bipolar Transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low voltage, high speed switching applications requiring economical and efficient energy control.

  • MC7912ACD2TG

    IC: voltage regulator; linear,fixed; -12V; 1A; D2PAK; SMD; tube

  • MC7912ACTG

    IC: voltage regulator; linear,fixed; -12V; 1A; TO220AB; THT; tube

  • MC7912BD2TG

    IC: voltage regulator; linear,fixed; -12V; 1A; D2PAK; SMD; tube

  • NSS12501UW3T2G

    Low Saturation Voltage Bipolar Transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low voltage, high speed switching applications requiring economical and efficient energy control.

  • NSS60100DMTTBG

    ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors feature ultra-low saturation voltage VCE(sat) and high current gain capability in a small 2x2 mm plastic leadless package. These devices are designed for low voltage applications requiring economical and efficient energy con

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd