LOGO
LOGO
MUR160RLG Image

img for reference only

Mfr. #:
MUR160RLG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Diode Standard 600 V 1A Through Hole Axial
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series SWITCHMODE?
Package Tape and Reel (TR)
Diode Type Standard
Voltage - DC Reverse (Vr) (max) 600 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) 1.25 V @ 1 A
Speed Fast Recovery = < 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage 5 μA @ 600 V
Mounting Type Through Hole
Package/Case DO-204AL, DO-41, Axial
Supplier Device Package Axial
Related models
  • NSVMUN2112T1G

    Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59

  • NSVMUN2236T1G

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59

  • TN6719A_D75Z

    Transistor - Bipolar (BJT) - Single NPN 300 V 200 mA 1 W Through Hole TO-226

  • TN6725A_D26Z

    Transistor - Bipolar (BJT) - Single NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

  • TN6725A_D27Z

    Transistor - Bipolar (BJT) - Single NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

  • TN6725A_D74Z

    Transistor - Bipolar (BJT) - Single NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

  • MPSA20_D26Z

    Transistor - Bipolar (BJT) - Single NPN 40 V 100 mA 125MHz 625 mW Through Hole TO-92-3

  • MPSA20_D27Z

    Transistor - Bipolar (BJT) - Single NPN 40 V 100 mA 125MHz 625 mW Through Hole TO-92-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd