LOGO
LOGO
SBCP56T1G Image

img for reference only

Mfr. #:
SBCP56T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This NPN bipolar transistor is intended for audio amplifier applications. The device is housed in a SOT-223 package and is suitable for medium power surface mount applications.
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type NPN
Collector-Emitter Breakdown Voltage(Vceo) 80V
Collector Current(Ic) 1A
Power(Pd) 1.5W
Collector Cutoff Current(Icbo) 100nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 500mV@500mA,50mA
DC Current Gain(hFE@Ic,Vce) 100@150mA,2V
Characteristic Frequency(fT) 130MHz
Operating Temperature -65℃~ 150℃@(Tj)
Related models
  • FSV12150V

    Schottky Diodes & Rectifiers 12 Amp 150V Schottky Rectifier

  • S210

    Schottky Barrier Diodes & Rectifiers 2a 100V Rectifier Schottky Barrier

  • RURG80100-F085

    Rectifier 1000V, 80A Ultrafast Automotive Diode

  • ES1F

    Rectifier 1.0 A Ultra Fast Recovery Rect

  • FSB749

    Bipolar Transistor - Bipolar Junction Transistor (BJT) PNP Transistor Low Saturation

  • KSA1013YTA

    Bipolar Transistor - Bipolar Junction Transistor (BJT) PNP Epitaxial Transistor

  • BC547B

    Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN 45V 100mA HFE/45

  • FJPF5027OTU

    Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN Silicon Trans

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd