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NSS1C200MZ4T1G Image

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Mfr. #:
NSS1C200MZ4T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Low Saturation Voltage Bipolar Junction Transistors (BJTs) are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low voltage, high speed switching applications requiring economical and efficient energy control.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Vceo) 100V
Collector Current (Ic) 2A
Power (Pd) 2W
Collector Cutoff Current (Icbo) 100nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 220mV@2A,200mA
DC Current Gain (hFE@Ic,Vce) 120@500mA,2V
Characteristic Frequency (fT) 120MHz
Operating Temperature -55℃~ 150℃@(Tj)
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