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MMBT2222LT1G Image

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Mfr. #:
MMBT2222LT1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This NPN bipolar transistor is suitable for linear and switching applications. This device is available in a SOT-23 package for low power surface mount applications.
Datasheet:
In Stock:
13560
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type NPN
Collector-Emitter Breakdown Voltage(Vceo) 30V
Collector Current(Ic) 600mA
Power(Pd) 225mW
Collector Cutoff Current(Icbo) 10nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 1.6V@500mA,50mA
DC Current Gain(hFE@Ic,Vce) 100@150mA,10V
Characteristic Frequency(fT) 250MHz
Operating Temperature -55℃~ 150℃@(Tj)
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