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NSV1C201LT1G Image

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Mfr. #:
NSV1C201LT1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Low VCE(sat) bipolar transistors are miniature surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low voltage, high speed switching applications requiring economical and efficient energy control.
Datasheet:
In Stock:
119
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type NPN
Collector-Emitter Breakdown Voltage (Vceo) 100V
Collector Current (Ic) 2A
Power (Pd) 710mW
Collector Cutoff Current (Icbo) 100nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 150mV@2A,200mA
DC Current Gain (hFE@Ic,Vce) 240@500mA,2V
Characteristic Frequency (fT) 110MHz
Operating Temperature -55℃~ 150℃@(Tj)
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