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MJD210T4G Image

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Mfr. #:
MJD210T4G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Datasheet:
In Stock:
140
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Vceo) 25V
Collector Current (Ic) 5A
Power (Pd) 1.4W
Collector Cutoff Current (Icbo) -
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.8V@5A,1A
DC Current Gain (hFE@Ic,Vce) 45@2A,1V
Characteristic Frequency (fT) 65MHz
Operating Temperature -65℃~ 150℃@(Tj)
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