LOGO
LOGO
MCT5211SR2M Image

img for reference only

Mfr. #:
MCT5211SR2M
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The MCT52XXM series includes a high efficiency AlGaAs infrared emitting diode coupled with an NPN phototransistor in a six-pin dual in-line package. The MCT52XXM is suitable for CMOS and LSTT/TTL interfaces and provides 250% CTR CE(SAT) with an LED input current of 1mA. It provides 1.6mA
Datasheet:
In Stock:
3
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Optocoupler-Phototransistor output
Input voltage type DC
Output type Phototransistor
Number of output channels 1
Forward voltage 1.25V
Reverse voltage 6V
Output current 150mA
Receiving end voltage 100V
Collector-emitter saturation voltage (Vce(sat)@Ic,IF) -
Rise time -
Fall time -
Isolation voltage (rms) 4.17kV
Operating temperature -40℃~ 100℃
Related models
  • FDB047N10

    Power MOSFET, N-Channel, 100 V, 120 A, 0.0039 ohm, TO-263AB, Surface Mount

  • FDC642P

    Power MOSFET, P-Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount

  • FDD2582

    Power MOSFET, N-Channel, 150 V, 21 A, 0.058 ohm, TO-252AA, Surface Mount

  • FQB5N90TM

    MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, T

  • FDMC7572S

    MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A,

  • FDS9435A

    Power MOSFET, P-Channel, 30 V, 5.3 A, 0.05 ohm, SOIC, Surface Mount

  • MMBF5103

    Transistor, JFET, 40 V, 40 mA, -2.7 V, SOT-23, 3-pin, 150 °C

  • FQT4N20LTF

    Power MOSFET, N-Channel, 200 V, 850 mA, 1.1 ohm, SOT-223, Surface Mount

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd