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4N33SR2M Image

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Mfr. #:
4N33SR2M
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature a GaAs infrared emitting diode optically coupled to a silicon epitaxial planar photodarlington.
Datasheet:
In Stock:
742
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Optocoupler-Phototransistor Output
Input Voltage Type DC
Output Type Darlington Transistor
Number of Output Channels 1
Forward Voltage 1.2V
Reverse Voltage 3V
Output Current 150mA
Receiving End Voltage 30V
Collector-Emitter Saturation Voltage (Vce(sat)@Ic,IF) 1V@2mA,8mA
Rise Time -
Fall Time -
Isolation Voltage (rms) 4.17kV
Operating Temperature -40℃~ 100℃
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