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MOCD217R2VM Image

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Mfr. #:
MOCD217R2VM
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The MOCD217M device consists of two GaAs infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors in a small surface mount plastic package. It is suitable for high density applications without the need for through board mounting.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Optocoupler-Phototransistor Output
Input Voltage Type DC
Output Type Phototransistor
Number of Output Channels 2
Forward Voltage 1.05V
Reverse Voltage 6V
Output Current 150mA
Receiving End Voltage 30V
Collector-Emitter Saturation Voltage (Vce(sat)@Ic,IF) 400mV@100uA,1mA
Rise Time 3.2us@2mA,100Ω
Fall Time 4.7us@2mA,100Ω
Isolation Voltage (rms) 2.5kV
Operating Temperature -40℃~ 100℃
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