CNY171VM ON | ON agency

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Mfr. #：

CNY171VM

Mfr.:

ON Semiconductor

Batch:

23+

Description:

The CNY17XM, CNY17FXM, and MOC810XM devices consist of a GaAs infrared emitting diode coupled to an NPN phototransistor in a dual in-line package.

Datasheet:

In Stock:

2000

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Product Catalog	Optocoupler-Phototransistor Output
Input Voltage Type	DC
Output Type	Phototransistor
Number of Output Channels	1
Forward Voltage	1.15V
Reverse Voltage	6V
Output Current	50mA
Receiving End Voltage	70V
Collector-Emitter Saturation Voltage (Vce(sat)@Ic,IF)	400mV@2.5mA,10mA
Rise Time	-
Fall Time	-
Isolation Voltage (rms)	4.17kV
Operating Temperature	-40℃~ 100℃

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Surface Mount N Channel 30 V 10A (Ta) 810mW (Ta) 8-SOIC
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Surface Mount N Channel 30 V 8A (Ta) 800mW (Ta) 8-SOIC
NTD4905NT4G

Surface mount N-channel 30 V 12A (Ta), 67A (Tc) 1.4W (Ta), 44W (Tc) DPAK
NTD4909NAT4G

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NTD4906NAT4G

Surface mount N-channel 30 V 10.3A (Ta), 54A (Tc) DPAK
NTMFS4945NT1G

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NTMFS4935NBT1G

Surface mount N-channel 30 V 13A (Ta), 93A (Tc) 930mW (Ta), 48W (Tc) 5-DFN (5x6) (8-SOFL)
NTMFS4939NT3G

Surface mount N-channel 30 V 9.3A (Ta), 53A (Tc) 920mW (Ta), 30W (Tc) 5-DFN (5x6) (8-SOFL)