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NSB9435T1G Image

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Mfr. #:
NSB9435T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The digital transistor is suitable for replacing a single device and its external resistor bias network. The bipolar digital transistor contains a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Vceo) 30V
Collector Current (Ic) 3A
Power (Pd) 3W
Collector Cutoff Current (Icbo) -
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 155mV@800mA,20mA
DC Current Gain (hFE@Ic,Vce) 200@800mA,1V
Characteristic Frequency (fT) 110MHz
Operating Temperature -55℃~ 150℃@(Tj)
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