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MMJT350T1G Image

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Mfr. #:
MMJT350T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type PNP
Collector-Emitter Breakdown Voltage (Vceo) 300V
Collector Current (Ic) 500mA
Power (Pd) 2.75W
Collector Cutoff Current (Icbo) 100nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
DC Current Gain (hFE@Ic,Vce) 30@50mA,10V
Characteristic Frequency (fT) -
Operating Temperature -55℃~ 150℃@(Tj)
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