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SBC856BDW1T3G Image

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Mfr. #:
SBC856BDW1T3G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This dual PNP bipolar transistor is suitable for general purpose amplifier applications. This device is housed in a SOT-363/SC-88 package for low power surface mount applications.
Datasheet:
In Stock:
8900
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type 2 PNP
Collector-Emitter Breakdown Voltage (Vceo) 65V
Collector Current (Ic) 100mA
Power (Pd) 380mW
Collector Cutoff Current (Icbo) 15nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 650mV@100mA,5mA
DC Current Gain (hFE@Ic,Vce) 290@2mA,5V
Characteristic Frequency (fT) 100MHz
Operating Temperature -55℃~ 150℃@(Tj)
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