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MJW21195G Image

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Mfr. #:
MJW21195G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Datasheet:
In Stock:
22
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type PNP
Collector-Emitter Breakdown Voltage(Vceo) 250V
Collector Current(Ic) 16A
Power(Pd) 200W
Collector Cutoff Current(Icbo) -
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 3V@16A,3.2A
DC Current Gain(hFE@Ic,Vce) 20@8A,5V
Characteristic Frequency(fT) 4MHz
Operating Temperature -65℃~ 150℃@(Tj)
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