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NSS12501UW3T2G Image

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Mfr. #:
NSS12501UW3T2G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Low Saturation Voltage Bipolar Transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low voltage, high speed switching applications requiring economical and efficient energy control.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type NPN
Collector-Emitter Breakdown Voltage(Vceo) 12V
Collector Current(Ic) 5A
Power(Pd) 1.5W
Collector Cutoff Current(Icbo) 100nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 100mV@4A,400mA
DC Current Gain(hFE@Ic,Vce) 315@3A,2V
Characteristic Frequency(fT) 150MHz
Operating Temperature -55℃~ 150℃@(Tj)
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