LOGO
LOGO
BAS19LT1G Image

img for reference only

Mfr. #:
BAS19LT1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This high voltage switching diode is suitable for high voltage, high speed switching applications. This dual diode device contains two electrically isolated high voltage switching diodes in a SOT-23 surface mount package.
Datasheet:
In Stock:
1443000
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Switching diode
Diode configuration Standalone
Power 385mW
DC reverse withstand voltage (Vr) 120V
Average rectified current (Io) 200mA
Forward voltage drop (Vf) 1V@100mA
Reverse current (Ir) 100nA@100V
Reverse recovery time (trr) 50ns
Operating temperature -55℃~ 150℃@(Tj)
Related models
  • BC556BTF

    Transistor - Bipolar (BJT) - Single PNP 65 V 100 mA 150MHz 500 mW Through Hole TO-92-3

  • KSA473YTU

    Transistor - Bipolar (BJT) - Single PNP 30 V 3 A 100MHz 10 W Through Hole TO-220-3

  • TIP32ATU

    Transistor - Bipolar (BJT) - Single PNP 60 V 3 A 3MHz 2 W Through Hole TO-220-3

  • 2SA2016-TD-E

    Transistor - Bipolar (BJT) - Single PNP 50 V 7 A 330MHz 3.5 W Surface Mount PCP

  • MJD32T4G

    Transistor - Bipolar (BJT) - Single PNP 40 V 3 A 3MHz 1.56 W Surface Mount DPAK

  • 2SC5569-TD-E

    Transistor - Bipolar (BJT) - Single NPN 50 V 7 A 330MHz 1.3 W Surface Mount SOT-89/PCP-1

  • PCP1103-TD-H

    Transistor - Bipolar (BJT) - Single PNP 30 V 1.5 A 450MHz 3.5 W Surface Mount PCP

  • 15C01M-TL-E

    Transistor - Bipolar (BJT) - Single NPN 15 V 700 mA 330MHz 300 mW Surface Mount SC-70 / MCP3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd