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FDB031N08 Image

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Mfr. #:
FDB031N08
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This N-Channel MOSFET is produced using the PowerTrench process, which is designed to minimize on-resistance while maintaining excellent switching performance.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 75V
Continuous Drain Current (Id) 235A
Power (Pd) 375W
On-resistance (RDS(on)@Vgs,Id) 3.1mΩ@10V,75A
Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
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