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FQB7N30TM Image

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Mfr. #:
FQB7N30TM
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 300V
Continuous Drain Current (Id) 7A
Power (Pd) 85W; 3.13W
On-resistance (RDS(on)@Vgs,Id) 700mΩ@3.5A,10V
Threshold Voltage (Vgs(th)@Id) 5V@250uA
Gate Charge (Qg@Vgs) 17nC@10V
Input Capacitance (Ciss@Vds) 610pF@25V
Operating Temperature -55℃~ 150℃@(Tj)
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