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NCP5106BDR2G Image

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Mfr. #:
NCP5106BDR2G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
IC: driver; IGBT half-bridge, MOSFET half-bridge; high-/low-side, gate driver; SO8; Ch: 2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
IC type driver
Topology IGBT half-bridge, MOSFET half-bridge
IC type high-/low-side, gate driver
Package SO8
Output current -500...250mA
Number of channels 2
IC features integrated bootstrap functionality
Mounting SMD
Operating temperature -40...125°C
Pulse rise time 160ns
Pulse fall time 75ns
Packaging type Reel, tape
Voltage level 600V
Protection Undervoltage UVP
ON hot selling models
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