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NSBC114EPDXV6T1G Image

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Mfr. #:
NSBC114EPDXV6T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This series of digital transistors is designed to replace single devices and their external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The B
Datasheet:
In Stock:
8000
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Digital Transistor
Transistor Type 1 NPN,1 PNP-Pre-Bias
Power(Pd) 500mW
Collector Current(Ic) 100mA
Collector-Emitter Breakdown Voltage(Vceo) 50V
Collector Cutoff Current(Icbo) 500nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 250mV@10mA,300uA
DC Current Gain(hFE@Ic,Vce) 35@5mA,10V
Characteristic Frequency(fT) -
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