LOGO
LOGO
NSBC144WDXV6T1G Image

img for reference only

Mfr. #:
NSBC144WDXV6T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series bas
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Digital transistor
Transistor type 2 NPN-prebiased
Power (Pd) 500mW
Collector current (Ic) 100mA
Collector-emitter breakdown voltage (Vceo) 50V
Collector cutoff current (Icbo) 500nA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 250mV@10mA,5mA
DC current gain (hFE@Ic,Vce) 80@5mA,10V
Characteristic frequency (fT) -
Related models
  • LC75878WS-E

    LCD Driver 100-SQFP (14x14)

  • LC75879PTS-H

    LCD Driver 80-TQFPJ (12x12)

  • LC75879PTS-T-H

    LCD Driver 80-TQFPJ (12x12)

  • NSVDTC123JM3T5G

    Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723

  • KST2222AMTF

    Transistor - Bipolar (BJT) - Single NPN 40 V 600 mA 300MHz 350 mW Surface Mount SOT-23-3

  • KST2907AMTF

    Transistor - Bipolar (BJT) - Single PNP 60 V 600 mA 200MHz 350 mW Surface Mount SOT-23-3

  • BCX19

    Transistor - Bipolar (BJT) - Single NPN 45 V 500 mA 300 mW Surface Mount SOT-23-3

  • FGH40T65UQDF-F155

    IGBT Trench Field Stop 650 V 80 A 231 W Through Hole TO-247-3

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd