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NSBC144WDXV6T1G Image

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Mfr. #:
NSBC144WDXV6T1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series bas
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Digital transistor
Transistor type 2 NPN-prebiased
Power (Pd) 500mW
Collector current (Ic) 100mA
Collector-emitter breakdown voltage (Vceo) 50V
Collector cutoff current (Icbo) 500nA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 250mV@10mA,5mA
DC current gain (hFE@Ic,Vce) 80@5mA,10V
Characteristic frequency (fT) -
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