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FQI5N60CTU Image

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Mfr. #:
FQI5N60CTU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
Transistor Type N-MOSFET
Polarization Unipolar
Drain-Source Voltage 600V
Drain Current 2.6A
Pulsed Drain Current 18A
Power Consumption 100W
Package I2PAK
Gate-Source Voltage ±30V
On-State Resistance 2.5Ω
Mounting Method THT
Gate Charge 19nC
Package Type Tube
Channel Type Enhancement
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