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FQI7N80TU Image

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Mfr. #:
FQI7N80TU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
Transistor type N-MOSFET
Polarization Unipolar
Drain-source voltage 800V
Drain current 4.2A
Pulsed drain current 26.4A
Power consumption 167W
Package I2PAK
Gate-source voltage ±30V
On-state resistance 1.5Ω
Mounting method THT
Gate charge 52nC
Package type Tube
Channel type Enhancement
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