LOGO
LOGO
FDMS86105 Image

img for reference only

Mfr. #:
FDMS86105
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 30A; 48W; Power56
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
Transistor Type N-MOSFET
Polarization Unipolar
Drain-Source Voltage 100V
Drain Current 26A
Pulsed Drain Current 30A
Power Consumption 48W
Package Power56
Gate-Source Voltage ±20V
On-State Resistance 57mΩ
Mounting Method SMD
Gate Charge 11nC
Packaging Type Reel, Tape
Channel Type Enhancement
Related models
  • MBRB20200CTT4G

    This Schottky rectifier uses the Schottky barrier principle and employs a platinum barrier metal. This advanced device is suitable for high frequency switching power supplies and converters with up to 48 V output. This device will block voltages up to 200 V and provide improved?

  • SB02-09C-TB-E

    SB02-09C is a Schottky barrier rectifier, 90V, 0.2A, low IR, single CP, suitable for switching regulators, converters, choppers, etc.

  • MBRD1045T4G

    The Schottky rectifier uses the Schottky barrier principle and adopts a metal-silicon power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. The rectifier is suitable for low-voltage high-frequency switching power supplies, freewheeling diodes and polarity

  • MBRS320T3G

    The Schottky rectifier uses the Schottky barrier principle and a large area metal-silicon power diode. The advanced geometry of the Schottky rectifier uses an epitaxial structure with oxide passivation and metal covered contacts. The device is suitable for low voltage, high frequency rectification,

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd