LOGO
LOGO
NVMFD5875NLT1G Image

img for reference only

Mfr. #:
NVMFD5875NLT1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 2 N-channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 22A
Power (Pd) 32W
On-resistance (RDS(on)@Vgs,Id) 27mΩ@10V,7.5A
Threshold Voltage (Vgs(th)@Id) 3V@250uA
Gate Charge (Qg@Vgs) 5.9nC@4.5V
Input Capacitance (Ciss@Vds) 540pF@25V
Reverse Transfer Capacitance (Crss@Vds) 36pF@25V
Operating Temperature -55℃~ 175℃@(Tj)
Related models
  • 4N35M

    Opto-isolator transistor output with base 4170Vrms 1 channel 6-DIP

  • HCPL0500

    Opto-isolator transistor output with base 2500Vrms 1 channel 8-SOIC

  • TIL111M

    Opto-isolator transistor output with base 7500Vpk 1 channel 6-DIP

  • H11AA1M

    Opto-isolator transistor output with base 4170Vrms 1 channel 6-DIP

  • 4N32SM

    Opto-isolator Darlington transistor with base output 4170Vrms 1 channel 6-SMD

  • FSSD07UMX

    Multiplexer 24-UMLP (3.4x2.5)

  • NBSG16VSBAHTBG

    Transceiver 16-FCBGA (4x4)

  • NBSG16BAHTBG

    Transceiver 16-FCBGA (4x4)

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd