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NVMYS4D6N04CLTWG Image

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Mfr. #:
NVMYS4D6N04CLTWG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Automotive power MOSFETs for compact and efficient designs in 5x6mm LFPAK package with high thermal performance. AEC-Q101 qualified MOSFETs, PPAP compliant, for automotive applications requiring higher board-level reliability.
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 40V
Continuous Drain Current (Id) 78A
Power (Pd) 50W
On-resistance (RDS(on)@Vgs,Id) 3.7mΩ@10V,35A
Threshold Voltage (Vgs(th)@Id) 2V@40uA
Gate Charge (Qg@Vgs) 11nC@4.5V
Input Capacitance (Ciss@Vds) 1.3nF@25V
Reverse Transfer Capacitance (Crss@Vds) 22pF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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