LOGO
LOGO
FDC637AN Image

img for reference only

Mfr. #:
FDC637AN
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Datasheet:
In Stock:
2279
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer ONSEMI
Transistor Type N-MOSFET
Technology PowerTrench?
Polarization Unipolar
Drain-Source Voltage 20V
Drain Current 6.2A
Power Consumption 1.6W
Package SuperSOT-6
Gate-Source Voltage ±20V
On-State Resistance 41mΩ
Mounting Method SMD
Gate Charge 16nC
Packaging Type Reel, Tape
Channel Type Enhancement
Related models
  • NTHL160N120SC1

    Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W

  • NTHL190N65S3HF

    Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247

  • CAT5113YI-50-GT3

    The CAT5113 is a single digital POT designed as an electronic replacement for mechanical potentiometers. Ideal for automated adjustments on high volume production lines, they are also well suited for applications where equipment requiring periodic adjustments.

  • CAT5115VI-00-GT3

    The CAT5115 is a single digital POT that can be used as an electronic replacement for mechanical potentiometers and trimmer potentiometers. These devices are suitable for automated adjustments on high-throughput production lines, and are also suitable for equipment that requires regular adjustments

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd