FDB9409-F085

HUF75639S3ST

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology enables the lowest on-resistance per unit silicon area, resulting in excellent performance. The device can withstand high energy in avalanche mode, and the diode has a very short?

HUFA75645S3S

N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ

FQB47P06TM-AM002

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is used to reduce on-resistance, provide excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power

NTB35N15T4G

NTBS2D7N06M7

This N-channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process, which incorporates shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance and best-in-class

FDB52N20TM

UniFETTM MOSFET is a high voltage MOSFET series based on planar stripe and DMOS technology. This MOSFET is suitable for reducing on-resistance, providing better switching performance and higher avalanche energy strength. This device series is suitable for switching power converter applications such

FDB8832