LOGO
LOGO
FQP10N20CTSTU Image

img for reference only

Mfr. #:
FQP10N20CTSTU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 200V
Continuous Drain Current (Id) 9.5A
Power (Pd) 72W
On-resistance (RDS(on)@Vgs,Id) 360mΩ@4.75A,10V
Threshold Voltage (Vgs(th)@Id) 4V@250uA
Gate Charge (Qg@Vgs) 26nC@10V
Input Capacitance (Ciss@Vds) 510pF@25V
Operating Temperature -55℃~ 150℃@(Tj)
Related models
  • NTD12N10-1G

    Through hole N channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) I-PAK

  • NL17SZ07EDFT2G

    Buffer, Non-Inverting 1 Element 1 Bit Per Element Open Drain Output SC-88A (SC-70-5/SOT-353)

  • 74LVC244ADTR2G

    Buffer, Non-Inverting 2 Elements 4 Bits Each Element 3-State Output 20-TSSOP

  • 74LVC540ADTR2G

    Buffer, Inverting 1 Element 8 Bits Each Element 3-State Output 20-TSSOP

  • NL17SZ125P5T5G

    Buffer, Non-Inverting 1 Element 1 Bit Each Element 3-State Output SOT-953

  • NL17SZ126P5T5G

    Buffer, Non-Inverting 1 Element 1 Bit Each Element 3-State Output SOT-953

  • NLU2G17AMX1TCG

    Buffer, Non-Inverting 2 Elements 1 Bit Per Element Push-Pull Output 6-ULLGA (1.45x1)

  • NLU3G17MUTAG

    Buffer, Non-Inverting 3 Element 1 Bit Per Element Push-Pull Output 8-UDFN (1.8x1.2)

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd