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HUF75639S3ST Image

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Mfr. #:
HUF75639S3ST
Mfr.:
ON Semiconductor
Batch:
23+
Description:
These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology enables the lowest on-resistance per unit silicon area, resulting in excellent performance. The device can withstand high energy in avalanche mode, and the diode has a very short?
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 56A
Power (Pd) 200W
On-resistance (RDS(on)@Vgs,Id) 25mΩ@10V,56A
Threshold Voltage (Vgs(th)@Id) 4V@250uA
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