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NTBS2D7N06M7 Image

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Mfr. #:
NTBS2D7N06M7
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This N-channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process, which incorporates shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance and best-in-class
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 110A
Power (Pd) 176W
On-resistance (RDS(on)@Vgs,Id) 2.2mΩ@10V,80A
Threshold Voltage (Vgs(th)@Id) 3.2V@250uA
Gate Charge (Qg@Vgs) 80nC@0~10V
Input Capacitance (Ciss@Vds) 6.655nF@30V
Reverse Transfer Capacitance (Crss@Vds) 57pF@30V
Operating Temperature -55℃~ 175℃@(Tj)
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