LOGO
LOGO
FDW262P Image

img for reference only

Mfr. #:
FDW262P
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P Channel
Drain Source Voltage (Vdss) 20V
Continuous Drain Current (Id) 4.5A
Power (Pd) 1.3W
On-resistance (RDS(on)@Vgs,Id) 47mΩ@4.5A,4.5V
Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
Gate Charge (Qg@Vgs) 18nC@4.5V
Input Capacitance (Ciss@Vds) 1.193nF@10V
Operating Temperature -55℃~ 150℃@(Tj)
Related models
  • MJ802G

    MJ Series 90 V 30 A Screw Mount High Power NPN Silicon Transistor - TO-204AA

  • NTPF600N80S3Z

    SF3 800V 600MOHM TO-220F

  • NXH010P120MNF1PNG

    2N-Channel 1200 V 114 A 250 W Chassis Mount Mosfet Array - Module

  • NXH010P120MNF1PTNG

    a SiC MOSFET module containing a 10 mohm 1200V SiC MOSFET half bridge and an NT

  • NXH020F120MNF1PTG

    PIM F1 SIC FULL BRIDGE 1200V 20MOHM

  • NXH300B100H4Q2F2PG

    1118 V 73 A 194 W Trench Field Stop Dual IGBT Module - 53-PIM/Q2PACK

  • NXH300B100H4Q2F2SG

    Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost, PIM-68

  • NXH40B120MNQ0SNG

    Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, ,PIM-22

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd