LOGO
LOGO
NCP81075DR2G Image

img for reference only

Mfr. #:
NCP81075DR2G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The NCP81075 is a high-performance dual MOSFET (high-side and low-side) gate driver IC suitable for driving high-speed, high-voltage MOSFETs operating at voltages up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode to drive the
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Gate Driver IC
Drive Configuration Low Side; High Side
Number of Driver Channels 2
Load Type MOSFET
Power Supply Voltage 8.5V~20V
Peak Sink Current 4A
Peak Source Current 4A
Rise Time 8ns
Fall Time 7ns
Operating Temperature -40℃~ 140℃@(Tj)
Related models
  • HUF76629D3

    Through Hole N Channel 100 V 20A (Tc) 110W (Tc) I-PAK

  • HUFA76419S3S

    Surface Mount N Channel 60 V 29A (Tc) 75W (Tc) D2PAK (TO-263)

  • NDP6020P

    Through hole P channel 20 V 24A (Tc) 60W (Tc) TO-220-3

  • FQP3N90

    Through Hole N Channel 900 V 3.6A (Tc) 130W (Tc) TO-220-3

  • 74ACQ240SJX

    Buffer, Inverting 2 Elements 4 Bits Each Element 3-State Output 20-SOP

  • 74ACT652MTCX

    Transceiver, Non-Inverting 1 Element 8 Bits Per Element Push-Pull Output 24-TSSOP

  • 74ACTQ16646MTDX

    Transceiver, Non-Inverting 2 Element 8 Bits Each Element 3-State Output 56-TSSOP

  • 74ACTQ244QSC

    Buffer, Non-Inverting 2 Elements 4 Bits 3-State Output 20-QSOP

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd