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FDN360P Image

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Mfr. #:
FDN360P
Mfr.:
ON Semiconductor
Batch:
23+
Description:
This P-channel logic level MOSFET is produced using an advanced PowerTrench process, specifically designed to minimize on-resistance while maintaining low gate charge for excellent switching performance. This device is ideal for applications requiring low inline power loss and fast switching.
Datasheet:
In Stock:
4660
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P-channel
Drain Source Voltage (Vdss) 30V
Continuous Drain Current (Id) 2A
Power (Pd) 500mW
On-resistance (RDS(on)@Vgs,Id) 80mΩ@10V,2A
Threshold Voltage (Vgs(th)@Id) 3V@250uA
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