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1N5819RLG Image

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Mfr. #:
1N5819RLG
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The Schottky rectifier uses the Schottky barrier principle and adopts a large area metal-silicon power diode. The advanced geometry of the Schottky rectifier uses a chromium barrier metal, oxide passivation, and an epitaxial structure with metal-covered contacts. The rectifier is suitable for low v
Datasheet:
In Stock:
4355
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Schottky diode
DC reverse withstand voltage (Vr) 40V
Average rectified current (Io) 1A
Forward voltage drop (Vf) 900mV@3A
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