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MBRD1045T4G Image

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Mfr. #:
MBRD1045T4G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The Schottky rectifier uses the Schottky barrier principle and adopts a metal-silicon power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. The rectifier is suitable for low-voltage high-frequency switching power supplies, freewheeling diodes and polarity
Datasheet:
In Stock:
4456
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Schottky diode
DC reverse withstand voltage (Vr) 45V
Average rectified current (Io) 10A
Forward voltage drop (Vf) 840mV@20A
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