LOGO
LOGO
MBRS320T3G Image

img for reference only

Mfr. #:
MBRS320T3G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The Schottky rectifier uses the Schottky barrier principle and a large area metal-silicon power diode. The advanced geometry of the Schottky rectifier uses an epitaxial structure with oxide passivation and metal covered contacts. The device is suitable for low voltage, high frequency rectification,
Datasheet:
In Stock:
3220
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Schottky diode
DC reverse withstand voltage (Vr) 20V
Average rectified current (Io) 4A
Forward voltage drop (Vf) 500mV@3A
Related models
  • MTD10N10ELT4

    Surface mount N channel 100 V 10A (Tc) 1.75W (Ta), 40W (Tc) DPAK

  • MTD5P06VT4

    Surface mount type P channel 60 V 5A (Tc) 2.1W (Ta), 40W (Tc) DPAK

  • MTD6N15T4

    Surface Mount N Channel 150 V 6A (Tc) DPAK

  • MTD6N20ET4

    Surface Mount N Channel 200 V 6A (Tc) DPAK

  • MMSF3P02HDR2

    Surface Mount Type P Channel 20 V 5.6A (Ta) 2.5W (Ta) 8-SOIC

  • NTF3055-100T1

    Surface mount N channel 60 V 3A (Ta) 1.3W (Ta) SOT-223 (TO-261)

  • MMFT960T1

    MOSFET N-CH 60V 300MA SOT223

  • MMFT107T1

    Surface mount N channel 200 V 250 mA (Tc) SOT-223 (TO-261)

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd