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MBRS190T3G Image

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Mfr. #:
MBRS190T3G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
The Schottky rectifier uses the Schottky barrier principle in a large area metal-silicon power diode. The advanced geometry of the Schottky rectifier uses an epitaxial structure with oxide passivation and metal covered contacts. The device is suitable for low voltage, high frequency rectification,
Datasheet:
In Stock:
10000
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Schottky diode
DC reverse withstand voltage (Vr) 90V
Average rectified current (Io) 1A
Forward voltage drop (Vf) 750mV@1A
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