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FGB30N6S2T Image

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Mfr. #:
FGB30N6S2T
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type -
Collector-emitter breakdown voltage (Vces) 600V
Collector current (Ic) 45A
Power (Pd) 167W
Gate threshold voltage (Vge(th)@Ic) 2.5V@15V,12A
Gate charge (Qg@Ic,Vge) 23nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) 6ns
Turn-off delay time (Td(off)) 40ns
Conduction loss (Eon) 0.055mJ
Turn-off loss (Eoff) 0.11mJ
Operating temperature -
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