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FPN660A Image

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Mfr. #:
FPN660A
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type PNP
Collector Current(Ic) 3A
Collector-Emitter Breakdown Voltage(Vceo) 60V
Power(Pd) 1W
DC Current Gain(hFE@Ic,Vce) 250@500mA,2V
Characteristic Frequency(fT) 75MHz
Collector Cutoff Current(Icbo) 100nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 400mV@2A,200mA
Operating Temperature -55℃~ 150℃@(Tj)
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