LOGO
LOGO
2N5401YBU Image

img for reference only

Mfr. #:
2N5401YBU
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Bipolar Transistor - Bipolar Junction Transistor (BJT) PNP Transistor General Purpose
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-92-3
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current 600 mA
Collector-Emitter Maximum Voltage VCEO 150 V
Collector-Base Voltage VCBO 160 V
Emitter-Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage
Pd-Power Dissipation 625 mW
Gain Bandwidth Product fT 400 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Qualification
Series 2N5401
Package Bulk
Related models
  • 2N7000-D26Z

    Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92

  • 2N7000-D74Z

    Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92

  • 2N7000-D75Z

    Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92

  • BSS138LT3G

    Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23

  • 2N7000

    Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92

  • 2N7000BU

    Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92

  • 2N7000TA

    Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92

ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd