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FQD19N10LTF Image

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Mfr. #:
FQD19N10LTF
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 15.6A
Power (Pd) 50W; 2.5W
On-resistance (RDS(on)@Vgs,Id) 100mΩ@7.8A,10V
Threshold Voltage (Vgs(th)@Id) 2V@250uA
Gate Charge (Qg@Vgs) 18nC@5V
Input Capacitance (Ciss@Vds) 870pF@25V
Operating Temperature -55℃~ 150℃@(Tj)
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