FDME1034CZT ON | ON agency

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Mfr. #：

FDME1034CZT

Mfr.:

ON Semiconductor

Batch:

23+

Description:

this device is specifically designed as a single package solution for dc/dc switching mosfets in cell phones and other mobile applications. it features an independent n-channel and p-channel mosfet with low on-resistance for minimal conduction losses. what is the gate charge of each mosfet?

Datasheet:

Datasheet

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
product catalog	field effect transistor (mosfet)
type	1 n channel 1 p channel
drain-source voltage (vdss)	20v
continuous drain current (id )	3.8a; 2.6a
power (pd)	600mw
on-resistance (rds(on)@vgs,id)	66mω@3.4a,4.5v
threshold voltage (vgs(th)@id)	1v@250ua
gate charge (qg@vgs)	4.2nc@4.5v
input capacitance (ciss@vds)	300pf@10v
operating temperature	-55℃~ 150℃@(tj)

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