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FDME1034CZT Image

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Mfr. #:
FDME1034CZT
Mfr.:
ON Semiconductor
Batch:
23+
Description:
this device is specifically designed as a single package solution for dc/dc switching mosfets in cell phones and other mobile applications. it features an independent n-channel and p-channel mosfet with low on-resistance for minimal conduction losses. what is the gate charge of each mosfet?
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
product catalog field effect transistor (mosfet)
type 1 n channel 1 p channel
drain-source voltage (vdss) 20v
continuous drain current (id ) 3.8a; 2.6a
power (pd) 600mw
on-resistance (rds(on)@vgs,id) 66mω@3.4a,4.5v
threshold voltage (vgs(th)@id) 1v@250ua
gate charge (qg@vgs) 4.2nc@4.5v
input capacitance (ciss@vds) 300pf@10v
operating temperature -55℃~ 150℃@(tj)
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