NVMFS5C404NWFT1G-K ON | ON agency

img for reference only

Mfr. #：

NVMFS5C404NWFT1G-K

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Surface mount N-channel 40 V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W (Tc) 5-DFN (5x6) (8-SOFL)

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	Automotive, AEC-Q101
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	53A (Ta), 378A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	0.7 mOhm @ 50A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge (Qg) (max) at Vgs	128 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	8400 pF @ 25 V
FET function	-
Power dissipation (max)	3.9W (Ta), 200W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	5-DFN (5x6) (8-SOFL)
Package/case	8-PowerTDFN, 5-lead

MPS5172G

Transistor - Bipolar (BJT) - Single NPN 25 V 100 mA 625 mW Through Hole TO-92 (TO-226)
MPS650G

Transistor - Bipolar (BJT) - Single NPN 40 V 2 A 75MHz 625 mW Through Hole TO-92 (TO-226)
MPS6521G

Transistor - Bipolar (BJT) - Single NPN 25 V 100 mA 625 mW Through Hole TO-92 (TO-226)
MPS6560G

Transistor - Bipolar (BJT) - Single NPN 25 V 500 mA 60MHz 625 mW Through Hole TO-92 (TO-226)
MPS6601G

Transistor - Bipolar (BJT) - Single NPN 25 V 1 A 100MHz 625 mW Through Hole TO-92 (TO-226)
MPS6602G

Transistor - Bipolar (BJT) - Single NPN 40 V 1 A 100MHz 625 mW Through Hole TO-92 (TO-226)
MPS6652G

Transistor - Bipolar (BJT) - Single PNP 40 V 1 A 100MHz 625 mW Through Hole TO-92 (TO-226)
MPS6717G

Transistor - Bipolar (BJT) - Single NPN 80 V 500 mA 1 W Through Hole TO-92 (TO-226)