FDN339AN_G ON | ON agency

img for reference only

Mfr. #：

FDN339AN_G

Mfr.:

ON Semiconductor

Batch:

23+

Description:

Surface mount N channel 20 V 3A (Ta) 500mW (Ta) SOT-23-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	onsemi
Series	PowerTrench?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	3A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	2.5V, 4.5V
On-Resistance (max) at Id, Vgs	35 milliohms @ 3A, 4.5V
Vgs(th) (max) at Id	1.5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	10 nC @ 4.5 V
Vgs (max)	±8V
Vds Input Capacitance (Ciss) (Max)	700 pF @ 10 V
FET Function	-
Power Dissipation (Max)	500 mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package/Case	TO-236-3, SC-59, SOT-23-3

BD679AG

This medium power NPN Darlington bipolar power transistor is used as an output device in complementary general purpose amplifier applications.
MPSA14
MJD127RLG

This Darlington bipolar power transistor is suitable for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
MJD122RLG

This Darlington bipolar power transistor is suitable for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
TIP147TTU
BDX34BG
TIP110G

The Darlington bipolar power transistors are suitable for general purpose amplifier and low speed switching applications. TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.
TIP147FTU