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NDD01N60-1G Image

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Mfr. #:
NDD01N60-1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 600 V 1.5A (Tc) 46W (Tc) I-Pak
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 1.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 8.5 ohms @ 200mA, 10V
Vgs(th) (max) at Id 3.7V @ 50μA
Gate Charge (Qg) (max) at Vgs 7.2 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (max) 160 pF @ 25 V
FET Function -
Power Dissipation (max) 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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