LOGO
LOGO
NDD60N360U1-1G Image

img for reference only

Mfr. #:
NDD60N360U1-1G
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through Hole N Channel 600 V 11A (Tc) 114W (Tc) I-PAK
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 11A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 360 mOhm @ 5.5A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge (Qg) (max) at Vgs 26 nC @ 10 V
Vgs (max) ±25V
Various Vds Input Capacitance (Ciss) (max) 790 pF @ 50 V
FET Function -
Power Dissipation (max) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
ON hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd