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IRFN214BTA_FP001 Image

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Mfr. #：
IRFN214BTA_FP001
Mfr.:
ON Semiconductor
Batch:
23+
Description:
Through hole N channel 250 V 600mA (Ta) 1.8W (Ta) TO-92-3
Datasheet:
Datasheet
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tape and Box (TB)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 250 V
Current at 25°C - Continuous Drain (Id) 600 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at different Id, Vgs 2 ohms @ 300 mA, 10 V
Vgs(th) (max) at different Id 4 V @ 250 μA
Gate Charge (Qg) (max) at different Vgs 10.5 nC @ 10 V
Vgs (max) ±30 V
Various Vds Input Capacitance (Ciss) (Max) 275 pF @ 25 V
FET Function -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package/Case TO-226-3, TO-92-3 (TO-226AA) Formed Lead
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